GE6061 Darlington BJT

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  • 100 NEW JERSEY SEMICONDUCTOR

Trans Darlington NPN 400V 20A

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Features Values Unit
Configuration Single
Maximum Base Emitter Saturation Voltage 2.5@0.5A@5A 3.5@2A@20A
Maximum Collector Base Voltage 450 V
Maximum Collector Emitter Voltage 400 V
Maximum Continuous DC Collector Current 20 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Minimum DC Current Gain 40@10A@5V 30@15A@5V
Minimum Operating Temperature -65 ᄀC
Number of Elements per Chip 1
Type NPN