GES5305 Darlington BJT

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  • 425 GENERAL ELECTRIC
  • 382 NEW JERSEY SEMICONDUCTOR

Trans Darlington 25V 0.3A

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Features Values Unit
Configuration Single
Maximum Base Emitter Saturation Voltage 1.6@0.2mA@200mA V
Maximum Collector Base Voltage 25 V
Maximum Collector Emitter Voltage 25 V
Maximum Continuous DC Collector Current 0.3 A
Maximum Emitter Base Voltage 12 V
Maximum Operating Temperature 125 ᄀC
Minimum DC Current Gain 2000@2mA@5V
Minimum Operating Temperature -65 ᄀC
Number of Elements per Chip 1
Typical Current Gain Bandwidth 60(Min) MHz