GES5816 GP BJT

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  • 200 HARRIS
  • 3144 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 0.75A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 0.75@50mA@500mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.75 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 135 ᄀC
Maximum Power Dissipation 500 mW
Maximum Transition Frequency 120(Min) MHz
Type NPN