GES5816 GP BJT
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- 200 HARRIS
- 3144 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 40V 0.75A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.75@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 0.75 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 135 | ﾡC |
| Maximum Power Dissipation | 500 | mW |
| Maximum Transition Frequency | 120(Min) | MHz |
| Type | NPN |