GSRU10030 GP BJT

default part image

Datasheet: View

Stock

  • 5 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 300V 15A

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Saturation Voltage 1@2A@10A V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 8 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 175000 mW
Maximum Transition Frequency 20(Min) MHz
Type NPN