GSRU15040 GP BJT

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  • 23 GENERAL SEMI
  • 8 GENERAL SEMICONDUCTOR
  • 8 NEW JERSEY SEMICONDUCTOR

Trans GP BJT 400V 20A

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Features Values Unit
Category Bipolar Power
Maximum Collector Base Voltage 500 V
Maximum Collector Emitter Saturation Voltage 1@3A@15A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 8 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 175000 mW
Maximum Transition Frequency 50 MHz