GSTU8040 GP BJT
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- 12 GENERAL SEMI
- 21 GENERAL SEMICONDUCTOR
Trans GP BJT NPN 400V 12A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 500 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1.6A@8A | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum DC Collector Current | 12 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | ﾡC |
| Maximum Power Dissipation | 175000 | mW |
| Maximum Transition Frequency | 25(Min) | MHz |
| Type | NPN |