ICTE10C TVS
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- 18 GENERAL SEMI
- 63 GENERAL SEMICONDUCTOR
- 2519 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Direction Type | Bi-Directional | |
| Maximum Clamping Voltage | 14.5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Peak Pulse Current | 90 | A |
| Maximum Reverse Leakage Current | 2 | uA |
| Maximum Reverse Stand-off Voltage | 10 | V |
| Minimum Breakdown Voltage | 11.7 | V |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Peak Pulse Power Dissipation | 1500 | W |
| Test Current | 1 | mA |