IR413 GP BJT

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  • 541 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 10A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Saturation Voltage 0.8@0.05A@0.5A V
Maximum DC Collector Current 10 A
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 125000 mW
Maximum Transition Frequency 2.5(Min) MHz
Type NPN