IRF243 MOSFET

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  • 3 GENERAL ELECTRIC
  • 3 HARRIS
  • 108 INTERNATIONAL RECTIFIER
  • 16354 NEW JERSEY SEMICONDUCTOR
  • 2 RF POWER

Trans MOSFET N-CH 150V 16A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Power MOSFET
Channel Mode Enhancement
Channel Type N
Configuration Single
Maximum Continuous Drain Current 16 A
Maximum Drain Source Voltage 150 V
Maximum Gate Source Voltage ±20 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1