IRF341 MOSFET

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  • 3 GENERAL ELECTRIC
  • 3 HARRIS
  • 3 MOTOROLA
  • 2146 NEW JERSEY SEMICONDUCTOR

Trans MOSFET N-CH 350V 10A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Power MOSFET
Channel Type N
Configuration Single
Maximum Continuous Drain Current 10 A
Maximum Drain Source Voltage 350 V
Maximum Power Dissipation 125000 mW
Number of Elements per Chip 1