IRF343 MOSFET

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  • 35 HARRIS
  • 2529 NEW JERSEY SEMICONDUCTOR

Trans MOSFET N-CH 350V 8.3A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Power MOSFET
Channel Type N
Configuration Single
Maximum Continuous Drain Current 8.3 A
Maximum Drain Source Voltage 350 V
Maximum Power Dissipation 125000 mW
Number of Elements per Chip 1