IRF510 MOSFET
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Stock
- 5 FAIRCHILD
- 19 GENERAL ELECTRIC
- 389 HARRIS
- 65 INTERNATIONAL RECTIFIER
- 51 MOTOROLA
- 3978 NEW JERSEY SEMICONDUCTOR
- 6 RCA
- 2 RF POWER
- 130 SGS
- 2 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| Maximum Continuous Drain Current | 5.6 | A |
| Maximum Drain Source Voltage | 100 | V |
| Maximum Gate Source Voltage | ±20 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 43000 | mW |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 |