IRF511 MOSFET
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- 5 GENERAL ELECTRIC
- 10 INTERNATIONAL RECTIFIER
- 6 MOTOROLA
- 2227 NEW JERSEY SEMICONDUCTOR
- 1 RF POWER
- 7 SGS
- 2 TEXAS INSTRUMENT
- 13 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| Maximum Continuous Drain Current | 4 | A |
| Maximum Drain Source Voltage | 60 | V |
| Maximum Gate Source Voltage | ±20 | V |
| Maximum Power Dissipation | 20000 | mW |
| Number of Elements per Chip | 1 |