IRF543 MOSFET
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- 9 NATIONAL SEMICONDUCTOR
- 2261 NEW JERSEY SEMICONDUCTOR
- 15 SAMSUNG
- 18 SGS
| Features | Values | Unit |
|---|---|---|
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| Maximum Continuous Drain Current | 28 | A |
| Maximum Drain Source Voltage | 100 | V |
| Maximum Gate Source Voltage | ±20 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 150000 | mW |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 |