IRF640 MOSFET

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Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Power MOSFET
Channel Mode Enhancement
Channel Type N
Configuration Single
Material Si
Maximum Continuous Drain Current 18 A
Maximum Drain Source Voltage 200 V
Maximum Gate Source Voltage ±20 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1