Datasheet: View
Features | Values | Unit |
---|---|---|
Category | Power MOSFET | |
Channel Mode | Enhancement | |
Channel Type | P | |
Configuration | Single Quad Drain Triple Source | |
Material | Si | |
Maximum Continuous Drain Current | 5.3 | A |
Maximum Drain Source Voltage | 20 | V |
Maximum Gate Source Voltage | ±12 | V |
Maximum Operating Temperature | 150 | °C |
Maximum Power Dissipation | 2500 | mW |
Minimum Operating Temperature | -55 | °C |
Number of Elements per Chip | 1 |