IRF730 MOSFET
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Stock
- 27 ADT
- 4 GENERAL ELECTRIC
- 140 HARRIS
- 690 INTEL
- 633 INTERNATIONAL RECTIFIER
- 28 MOTOROLA
- 3738 NEW JERSEY SEMICONDUCTOR
- 23 RCA
- 2 RF POWER
- 1482 SGS
- 200 SIEMENS
- 591 ST MICRO
- 1125 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| Maximum Continuous Drain Current | 5.5 | A |
| Maximum Drain Source Voltage | 400 | V |
| Maximum Gate Source Voltage | ±20 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 74000 | mW |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 |