IRF730F1 MOSFET
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- 135 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Dual Dual Drain | |
| Material | Si | |
| Maximum Continuous Drain Current | 5.2 | A |
| Maximum Drain Source Voltage | 20 | V |
| Maximum Gate Source Voltage | ±12 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 2 |