IRF743 MOSFET

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  • 2163 NEW JERSEY SEMICONDUCTOR

Trans MOSFET N-CH 350V 8A

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Features Values Unit
Category Power MOSFET
Channel Mode Enhancement
Channel Type N
Configuration Single
Maximum Continuous Drain Current 8 A
Maximum Drain Source Voltage 350 V
Maximum Gate Source Voltage ±20 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1