IRF830 MOSFET
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- 3 GENERAL SEMICONDUCTOR
- 608 HARRIS
- 566 INTERNATIONAL RECTIFIER
- 366 MOTOROLA
- 2795 NEW JERSEY SEMICONDUCTOR
- 62 RCA
- 6 SAMSUNG
- 9483 SGS
- 18 SILICONIX
- 30 SILICON TRANSISTOR CORP
- 286 ST MICRO
- 4 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| Maximum Continuous Drain Current | 4.5 | A |
| Maximum Drain Source Voltage | 500 | V |
| Maximum Gate Source Voltage | ±20 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 74000 | mW |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 |