IRF842 MOSFET

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  • 31 MOTOROLA
  • 5732 NEW JERSEY SEMICONDUCTOR
  • 365 SGS

Trans MOSFET N-CH Si 500V 7A

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Features Values Unit
Material Si
Maximum Gate Source Voltage ᄆ20 V
Maximum Operating Temperature 150 ᄀC
Minimum Operating Temperature -55 ᄀC
Category Power MOSFET
Channel Mode Enhancement
Channel Type N
Configuration Single
Maximum Continuous Drain Current 7 A
Maximum Drain Source Voltage 500 V
Maximum Power Dissipation 125000 mW
Number of Elements per Chip 1