IRFD220 MOSFET

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  • 11303 INTERNATIONAL RECTIFIER
  • 4900 INTERSIL

Trans MOSFET N-CH 200V 0.8A 4-Pin HexDIP

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Features Values Unit
Category Power MOSFET
Channel Mode Enhancement
Channel Type N
Configuration Single Dual Drain
Material Si
Maximum Continuous Drain Current 0.8 A
Maximum Drain Source Voltage 200 V
Maximum Gate Source Voltage ±20 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1