IRFP250 MOSFET
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- 100 ADVANCED SEMI
- 2 HARRIS
- 3 INTERNATIONAL RECTIFIER
- 741 NEW JERSEY SEMICONDUCTOR
- 7 WORLD WIDE
Trans MOSFET N-CH 200V 33A 3-Pin(3+Tab) TO-247
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| Material | Si | |
| Maximum Continuous Drain Current | 33 | A |
| Maximum Drain Source Voltage | 200 | V |
| Maximum Gate Source Voltage | ±20 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 180000 | mW |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 |