KSB1151 GP BJT

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  • 2741 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 60V 5A 3-Pin(3+Tab) TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.3@0.2A@2A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1300 mW
Type PNP