KSC5039 GP BJT

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  • 2147 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 5A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 800 V
Maximum Collector Emitter Saturation Voltage 1.5@0.5A@2.5A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 70000 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN