KSC5803 GP BJT

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  • 2156 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 800V 12A 3-Pin(3+Tab) TO-3PF

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 1500 V
Maximum Collector Emitter Saturation Voltage 3@2A@8A V
Maximum Collector Emitter Voltage 800 V
Maximum DC Collector Current 12 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 70000 mW
Type NPN