LS310 GP BJT
Datasheet: View
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- 811 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Dual | |
| Maximum Collector Base Voltage | 25 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@0.1mA@1mA | V |
| Maximum Collector Emitter Voltage | 25(Min) | V |
| Maximum DC Collector Current | 0.01 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 500 | mW |
| Maximum Transition Frequency | 200(Min) | MHz |
| Type | NPN |