LS312 GP BJT

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  • 785 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 0.01A T/R

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Features Values Unit
Category Bipolar Small Signal
Configuration Dual
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.25@0.1mA@1mA V
Maximum Collector Emitter Voltage 60(Min) V
Maximum DC Collector Current 0.01 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 500 mW
Maximum Transition Frequency 200(Min) MHz
Type NPN