MD7002B GP BJT

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  • 4 MOTOROLA
  • 1766 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 0.03A

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Features Values Unit
Category Bipolar Small Signal
Configuration Dual
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.35@1mA@10mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.03 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 260(Typ) MHz
Type NPN