MD8003 GP BJT

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  • 1222 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 0.03A 6-Pin TO-78

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Features Values Unit
Category Bipolar Small Signal
Configuration Dual
Material Si
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 0.03 A
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 240(Typ) MHz
Type NPN