MJ10006 Darlington BJT
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- 41 FUJI
- 50 MOTOROLA
- 1615 NEW JERSEY SEMICONDUCTOR
Trans Darlington NPN 350V 20A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2.5@250mA@5A | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum Continuous DC Collector Current | 20 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 40@2.5A@5V | 30@5A@5V |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |