MJ10008 Darlington BJT
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- 328 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2.5@500mA@10A | V |
| Maximum Collector Emitter Voltage | 450 | V |
| Maximum Continuous DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 40@5A@5V|30@10A@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |