MJ10022 Darlington BJT
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- 194 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2.5@1.2A@20A | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum Continuous DC Collector Current | 80 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 60@10A@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |