MJ11015G Darlington BJT
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- 4 ON SEMI
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 3.5@200mA@20A|5@300mA@30A | V |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum Continuous DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 200@30A@5V|1000@20A@5V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | PNP | |
| Typical Current Gain Bandwidth | 4(Min) | MHz |