MJ11018 Darlington BJT
Datasheet: View
Stock
- 28 MOTOROLA
- 505 NEW JERSEY SEMICONDUCTOR
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 3.8@150mA@15A | V |
| Maximum Collector Base Voltage | 150 | V |
| Maximum Collector Emitter Voltage | 150 | V |
| Maximum Continuous DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 50 | V |
| Maximum Operating Temperature | 175 | °C |
| Minimum DC Current Gain | 400@10A@5V|100@15A@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |