MJ11022 Darlington BJT
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- 3379 NEW JERSEY SEMICONDUCTOR
- 5 ON SEMI
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 3.8@150mA@15A | V |
| Maximum Collector Base Voltage | 250 | V |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum Continuous DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 50 | V |
| Maximum Operating Temperature | 175 | °C |
| Minimum DC Current Gain | 100@15A@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 3(Min) | MHz |