MJ11031 Darlington BJT
Datasheet: View
Stock
- 547 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 3@200mA@25A|4.5@300mA@50A | V |
| Maximum Collector Base Voltage | 90 | V |
| Maximum Collector Emitter Voltage | 90 | V |
| Maximum Continuous DC Collector Current | 50 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 1000@25A@5V|400@50A@5V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | PNP |