MJ12005 GP BJT

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  • 18 MOTOROLA
  • 3256 NEW JERSEY SEMICONDUCTOR
  • 1 RF POWER

Trans GP BJT NPN 8A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 5@1A@5A V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 100000 mW
Type NPN