MJ12010 GP BJT
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- 182 MOTOROLA
- 154 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 400V 10A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 5@1.2A@5A | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | ﾡC |
| Maximum Power Dissipation | 100000 | mW |
| Maximum Transition Frequency | 10(Typ) | MHz |
| Type | NPN |