MJ13333 GP BJT
Datasheet: View
Stock
- 31 MOTOROLA
- 126 NEW JERSEY SEMICONDUCTOR
- 12 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1.8@2A@10A|5@6.7A@20A | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum DC Collector Current | 20 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 175000 | mW |
| Type | NPN |