MJ15011 GP BJT
Datasheet: View
Stock
- 6 MOTOROLA
- 10407 NEW JERSEY SEMICONDUCTOR
- 213 ON SEMI
- 82 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.6@0.2A@2A|1@0.4A@4A | V |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 200000 | mW |
| Type | NPN |