MJ15020 GP BJT

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  • 10568 NEW JERSEY SEMICONDUCTOR
  • 87 ON SEMI

Trans GP BJT NPN 250V 4A 3-Pin(2+Tab) TO-3 Tray

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 250 V
Maximum Collector Emitter Saturation Voltage 1@0.1A@1A V
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 20(Min) MHz
Type NPN