MJ15021 GP BJT

default part image

Datasheet: View

Stock

  • 3859 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 250V 4A 3-Pin(2+Tab) TO-204 Tray

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 250 V
Maximum Collector Emitter Saturation Voltage 1@0.1A@1A V
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 20(Min) MHz
Type PNP