MJ16012 GP BJT

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  • 2 HARRIS
  • 4965 NEW JERSEY SEMICONDUCTOR
  • 2 WORLD WIDE

Trans GP BJT NPN 450V 15A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 2.5@0.7A@5A|3@1.3A@10A|3@1A@10A V
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 175000 mW
Type NPN