MJ21194 GP BJT

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  • 6 MOTOROLA
  • 1812 NEW JERSEY SEMICONDUCTOR
  • 18449 ON SEMI

Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-3 Tray

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Saturation Voltage 1.4@0.8A@8A 4@3.2A@16A
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 16 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 250000 mW
Maximum Transition Frequency 4(Min) MHz
Type NPN