MJ21196 GP BJT
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- 10632 NEW JERSEY SEMICONDUCTOR
- 45 ON SEMI
Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-3 Tray
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 400 | V |
| Maximum Collector Emitter Saturation Voltage | \1.4@0.8A@8A | 4@3.2A@16A\ |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum DC Collector Current | 16 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 250000 | mW |
| Maximum Transition Frequency | 4(Min) | MHz |
| Type | NPN |