MJ21294 GP BJT

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  • 17 NEW JERSEY SEMICONDUCTOR
  • 8 ON SEMI

Trans GP BJT NPN 250V 20A 3-Pin(2+Tab) TO-3 Tray

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Saturation Voltage 0.5@0.8A@8A 1@3.2A@16A
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 350000 mW
Maximum Transition Frequency 4(Min) MHz
Type NPN