MJ8505 GP BJT
Datasheet: View
Stock
- 4 FCR
- 9 FUJI
- 92 MOTOROLA
- 2794 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 2@2A@5A|5@4A@10A | V |
| Maximum Collector Emitter Voltage | 800 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 175000 | mW |
| Type | NPN |