MJE1100T GP BJT

default part image

Datasheet: View

Stock

  • 20 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 40V 4A 3-Pin(3+Tab) TO-220AB

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.3@20mA@1A|0.25@50mA@1A|0.2@120mA@1A|0.4@50mA@2A|0.35@120mA@2A|0.75@120mA@4A V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 75000 mW
Maximum Transition Frequency 11.5(Typ) MHz
Type PNP