MJE1100T GP BJT
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- 20 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@20mA@1A|0.25@50mA@1A|0.2@120mA@1A|0.4@50mA@2A|0.35@120mA@2A|0.75@120mA@4A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 75000 | mW |
| Maximum Transition Frequency | 11.5(Typ) | MHz |
| Type | PNP |