MJE13002 GP BJT

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  • 1164 MOTOROLA
  • 4273 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 300V 1.5A 3-Pin TO-225

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 0.5@0.1A@0.5A 1@0.25A@1A
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1400 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN